Trademark: WOLFSPEED, Wolfspeed 2275681
Word
WOLFSPEED, Wolfspeed
Device Descrption:
WOLF,STYLISED
ID
2275681
Trademark Type
Figurative
Status
Protected: Registered/protected
Application Date
11 February 2022
Registration Date
11 February 2022
Renewal Date
11 February 2032
Owner(s)
Service
PHILLIPS ORMONDE FITZPATRICK
Goods and Services:
Class 9:
Electric converters; DC/DC power converters; DC/AC power converters; battery chargers; renewable battery system to provide backup power; wireless chargers; inverters; power inverters; solar inverters; batteries, namely batteries for electric vehicles; charging stations for charging electric vehicles; semiconductor materials and devices, namely, silicon carbide and gallium nitride power and wireless systems; gallium nitride field effect transistors for tactical collision avoidance system; metal oxide semiconductor field effect transistors; lateral diffused metal oxide semiconductors; electric circuit boards; radar machines and apparatus; radar machines and apparatus for weather, navigation and air traffic control; radio receivers and transmitters; wireless transreceiver radios; satellite processors; satellite transmitters and receivers; high-electron mobility transistors; radio pagers; radio beacons; distance measuring apparatus; satellite navigational apparatus; navigational instruments; amplifiers; power amplifiers; MMIC power amplifiers; RF power amplifiers; electronic transmitters for jamming signals; radar jamming apparatus; power supplies, electrical; voltage stabilizing power supply; high-frequency switching power supplies; high-voltage power supplies; low-voltage power supplies; electronic power supplies for electric motors; telecommunications exchangers; telecommunications cables; telecommunication transmitters; electric capacitors for telecommunication apparatus; electric resistors for telecommunications apparatus; solar panels for the production of electricity; chips; microwave generating devices for industrial use; transistors; diodes; semiconductor devices; semiconductor chips; semiconductor wafers; radio frequency (rf) devices; power switching devices; power supplies; semiconductor wafers, materials and devices composed of silicon carbide and gallium nitride; electric switches, electric controllers; electric circuitry, namely, electric circuits, electric circuit closers, electric circuit openers, electric circuit switches; electronic devices, namely, semiconductor rectifying and schottky diodes for high power applications and low switching loss; power modules; power conversion systems.
Electric converters; DC/DC power converters; DC/AC power converters; battery chargers; renewable battery system to provide backup power; wireless chargers; inverters; power inverters; solar inverters; batteries, namely batteries for electric vehicles; charging stations for charging electric vehicles; semiconductor materials and devices, namely, silicon carbide and gallium nitride power and wireless systems; gallium nitride field effect transistors for tactical collision avoidance system; metal oxide semiconductor field effect transistors; lateral diffused metal oxide semiconductors; electric circuit boards; radar machines and apparatus; radar machines and apparatus for weather, navigation and air traffic control; radio receivers and transmitters; wireless transreceiver radios; satellite processors; satellite transmitters and receivers; high-electron mobility transistors; radio pagers; radio beacons; distance measuring apparatus; satellite navigational apparatus; navigational instruments; amplifiers; power amplifiers; MMIC power amplifiers; RF power amplifiers; electronic transmitters for jamming signals; radar jamming apparatus; power supplies, electrical; voltage stabilizing power supply; high-frequency switching power supplies; high-voltage power supplies; low-voltage power supplies; electronic power supplies for electric motors; telecommunications exchangers; telecommunications cables; telecommunication transmitters; electric capacitors for telecommunication apparatus; electric resistors for telecommunications apparatus; solar panels for the production of electricity; chips; microwave generating devices for industrial use; transistors; diodes; semiconductor devices; semiconductor chips; semiconductor wafers; radio frequency (rf) devices; power switching devices; power supplies; semiconductor wafers, materials and devices composed of silicon carbide and gallium nitride; electric switches, electric controllers; electric circuitry, namely, electric circuits, electric circuit closers, electric circuit openers, electric circuit switches; electronic devices, namely, semiconductor rectifying and schottky diodes for high power applications and low switching loss; power modules; power conversion systems.
Class 40:
Customized materials assembly for others; material processing information; metal processing; manufacture of radio frequency in microwave devices and components, namely packaged monolithic microwave integrated circuits (MMIC), packaged discrete transistors, MMIC bare die, discrete broadband die, discrete bare die for others; manufacture of transistors for others; manufacture of wireless communication components for others; manufacture of amplifiers for others; manufacture of lateral diffused metal oxide semiconductors (LDMOS) for others; manufacture of metal semiconductor field effect transistors (MESFETS) for others; manufacture of components formatted for the worldwide interoperability for microwave access (WiMax) standard for others; manufacturing services for others in the field of semiconductor devices; providing semiconductor material treatment information; technical support services, namely providing technical advice related to the manufacture of semiconductor materials and devices.
Customized materials assembly for others; material processing information; metal processing; manufacture of radio frequency in microwave devices and components, namely packaged monolithic microwave integrated circuits (MMIC), packaged discrete transistors, MMIC bare die, discrete broadband die, discrete bare die for others; manufacture of transistors for others; manufacture of wireless communication components for others; manufacture of amplifiers for others; manufacture of lateral diffused metal oxide semiconductors (LDMOS) for others; manufacture of metal semiconductor field effect transistors (MESFETS) for others; manufacture of components formatted for the worldwide interoperability for microwave access (WiMax) standard for others; manufacturing services for others in the field of semiconductor devices; providing semiconductor material treatment information; technical support services, namely providing technical advice related to the manufacture of semiconductor materials and devices.
Class 42:
Testing of semiconductor materials and devices, namely, silicon carbide and gallium nitride power and wireless systems; technical project research of semiconductor materials and devices namely, silicon carbide and gallium nitride power and wireless systems; research and development of semiconductor materials and devices namely, silicon carbide and gallium nitride power and wireless systems for others; engineering service in the field of semiconductor materials and devices namely, silicon carbide and gallium nitride power and wireless systems; design of radio frequency and microwave devices and components in the nature of packaged monolithic microwave integrated circuits (MMIC), packaged discrete transistors, MMIC bare die, discrete broadband die, discrete bare die for others, transistors, wireless communication components, amplifiers, lateral diffused metal oxide semiconductors (LDMOS), metal semiconductor field effect transistors (MESFETS), and components formatted for the worldwide interoperability for microwave access standard; packaging design; contract foundry design, testing and engineering support services in the field of semiconductor materials and devices.
Testing of semiconductor materials and devices, namely, silicon carbide and gallium nitride power and wireless systems; technical project research of semiconductor materials and devices namely, silicon carbide and gallium nitride power and wireless systems; research and development of semiconductor materials and devices namely, silicon carbide and gallium nitride power and wireless systems for others; engineering service in the field of semiconductor materials and devices namely, silicon carbide and gallium nitride power and wireless systems; design of radio frequency and microwave devices and components in the nature of packaged monolithic microwave integrated circuits (MMIC), packaged discrete transistors, MMIC bare die, discrete broadband die, discrete bare die for others, transistors, wireless communication components, amplifiers, lateral diffused metal oxide semiconductors (LDMOS), metal semiconductor field effect transistors (MESFETS), and components formatted for the worldwide interoperability for microwave access standard; packaging design; contract foundry design, testing and engineering support services in the field of semiconductor materials and devices.